| IPB80N06S2L07ATMA3 | |
|---|---|
| Onderdeel nummer | IPB80N06S2L07ATMA3 |
| Fabrikant | Infineon Technologies |
| Beschrijving | MOSFET N-CH 55V 80A TO263-3 |
| hoeveelheid beschikbaar | 2565 pcs new original in stock. Vraag voorraad en offerte aan |
| ECAD -model | |
| Datasheets | 1.IPB80N06S2L07ATMA3.pdf2.IPB80N06S2L07ATMA3.pdf3.IPB80N06S2L07ATMA3.pdf |
| IPB80N06S2L07ATMA3 Price |
Vraag prijs en doorlooptijd online aan or Email us: Info@ariat-tech.com |
| Technische informatie van IPB80N06S2L07ATMA3 | |||
|---|---|---|---|
| Fabrikant Onderdeelnummer | IPB80N06S2L07ATMA3 | Categorie | |
| Fabrikant | Cypress Semiconductor (Infineon Technologies) | Beschrijving | MOSFET N-CH 55V 80A TO263-3 |
| Pakket / koffer | PG-TO263-3-2 | hoeveelheid beschikbaar | 2565 pcs |
| VGS (th) (Max) @ Id | 2V @ 150µA | Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) | Leverancier Device Pakket | PG-TO263-3-2 |
| Serie | OptiMOS™ | Rds On (Max) @ Id, VGS | 6.7mOhm @ 60A, 10V |
| Vermogensverlies (Max) | 210W (Tc) | Verpakking / doos | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Pakket | Tape & Reel (TR) | Temperatuur | -55°C ~ 175°C (TJ) |
| montage Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | FET Type | N-Channel |
| FET Feature | - | Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 4.5V, 10V |
| Drain naar de Bron Voltage (Vdss) | 55 V | Current - Continuous Drain (Id) @ 25 ° C | 80A (Tc) |
| Base Productnummer | IPB80N | ||
| Download | IPB80N06S2L07ATMA3 PDF - EN.pdf | ||
E-mail ons: Info@Ariat-Tech.com of RFQ IPB80N06S2L07ATMA3 online.
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| IPB80N06S2L07ATMA3 afbeelding | IPB80N06S2L07ATMA3 Afbeelding | IPB80N06S2L07ATMA3 PDF |
| IPB80N06S2L07ATMA3 Datasheet | Download IPB80N06S2L07ATMA3 datasheet | Fabrikant Cypress Semiconductor (Infineon Technologies) |
